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參數(shù)資料
| 型號(hào)： | VBE60-06A |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) |
| 中文描述： | 60 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | MINIBLOC-4 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | VBE60-06A |
2003 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, Conditions and dimensions.
3
VBE 60-06A
Advanced Technical Information
Single Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
Features
International standard package miniBLOC
Isolation voltage 2500 V~
single Phase Rectifier Bridge with FREDs
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
-values
Soft recovery behaviour
Applications
Supplies for DC power equipment
Input and output rectifiers for high
frequency
Battery DC power supplies
Field supply for DC motors
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
Pulse test:
①
for resistive load at bridge output.
②
Pulse Width = 5 ms, Duty Cycle < 2.0 %
③
Pulse Width = 300
μ
s, Duty Cycle < 2.0 %
I
dAV
V
RRM
= 600 V
t
rr
= 35 ns
= 60 A
V
RSM
V
V
RRM
V
Type
600
600
VBE 60-06A
Symbol
Conditions
Maximum Ratings
I
FRMS
I
dAV
①
I
FSM
I
2
t
70
60
A
A
rect., d = 0.5; T
C
= 90°C
T
VJ
= 45°C; V
R
= 0;
t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 1.3 A; L = 180 μH
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
250
315
A
A
2
s
E
AS
0.2
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
0.1
A
-40...+150
°C
°C
°C
150
-40...+150
T
C
= 25°C
50/60 Hz, RMS
I
ISOL
≤
1 mA
mounting torque (M4)
terminal connection torque (M4)
typical
140
W
2500
V~
M
d
1.1-1.5/9-13
1.1-1.5/9-13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
Symbol
Conditions
Characteristic max. Values
I
R
②
V
R
= V
RRM
; T
VJ
= 25°C
V
R
= V
RRM
; T
VJ
= 125°C
I
F
= 30 A;
0.15
mA
mA
1
V
F
③
T
VJ
= 125°C
T
VJ
= 25°C
1.26
1.54
V
V
R
thJC
R
thCH
t
rr
1.15
0.1
K/W
K/W
typ.
I
F
= 1 A; -di/dt = 200 A/μs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/μs
T
VJ
= 100°C
typ.
35
ns
I
RM
typ.
5.5
A
+
–
~
~
~
–
miniBLOC, SOT-227 B
~
+
Data according to IEC 60747 and per diode unless otherwise specified
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