參數(shù)資料
型號(hào): V8P10
廠商: Vishay Intertechnology,Inc.
英文描述: High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
中文描述: 高電流密度表面貼裝戴MOS肖特基勢(shì)壘整流器
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 96K
代理商: V8P10
Vishay General Semiconductor
V8P10
Document Number: 89005
Revision: 26-Jun-07
www.vishay.com
1
New Product
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.466 V at I
F
= 4 A
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Trench MOS Schottky Technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters and polarity protection
applications.
MECHANICAL DATA
Case:
TO-277A (SMPC)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
K
2
1
TMBS
eSMP
TM
Series
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
8 A
100 V
150 A
100 mJ
V
F
at I
F
= 8 A
T
j
max.
0.582 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V8P10
UNIT
Device marking code
V810
Maximum repetitive peak reverse voltage
V
RRM
I
F(AV)
100
V
Maximum average forward rectified current (see Fig. 1)
8
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
150
A
Non-repetitive avalanche energy
at I
AS
= 2.0 A, L = 50 mH, T
j
= 25 °C
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
E
AS
100
mJ
dv/dt
10000
V/μs
T
J,
T
STG
- 40 to + 150
°C
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