參數(shù)資料
型號(hào): V62/07622-03XE
廠商: TEXAS INSTRUMENTS INC
元件分類: 穩(wěn)壓器
英文描述: 2.4 A SWITCHING REGULATOR, 1100 kHz SWITCHING FREQ-MAX, PQCC16
封裝: GREEN, PLASTIC, QFN-16
文件頁數(shù): 20/25頁
文件大小: 630K
代理商: V62/07622-03XE
ELECTRICAL CHARACTERISTICS
SLVS630C – APRIL 2007 – REVISED MAY 2008 .............................................................................................................................................................. www.ti.com
VI = 12 V, VO = 3.3 V, IO = 600 mA, EN = VI, TA = –55°C to 125°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
VI
Input voltage range (1)
3.1
17
V
IO = 0 mA, SYNC = GND, VI = 7.2 V,
20
TA = 25°C
(2)
I(Q)
Operating quiescent current
A
IO = 0 mA, SYNC = GND,
23
29
VI = 17 V
(2)
EN = GND
1.5
5
I(SD)
Shutdown current
A
EN = GND, TA = 25°C, VI = 7.2 V
1.5
3
ENABLE
VIH
EN high-level input voltage
1.3
V
VIL
EN low-level input voltage
0.3
V
EN trip-point hysteresis
170
mV
IIKG
EN input leakage current
EN = GND or VI, VI = 17 V
0.01
0.2
A
I(EN)
EN input current
0.6 V
≤ V(EN) ≤ 4 V
10
A
V(UVLO)
Undervoltage lockout threshold
Input voltage falling
2.8
3
3.1
V
Undervoltage lockout hysteresis
250
mV
POWER SWITCH
VI ≥ 5.4 V, IO = 350 mA
165
250
rDS(ON)
P-channel MOSFET on-resistance
VI = 3.5 V, IO = 200 mA
340
m
VI = 3 V, IO = 100 mA
490
P-channel MOSFET leakage
VDS = 17 V
0.1
1
A
current
P-channel MOSFET current limit
VI = 7.2 V, VO = 3.3 V
2400
mA
VI ≥ 5.4 V, IO = 350 mA
145
200
rDS(ON)
N-channel MOSFET on-resistance
VI = 3.5 V, IO = 200 mA
170
m
VI = 3 V, IO = 100 mA
200
N-channel MOSFET leakage
VDS = 17 V
0.1
3
A
current
POWER GOOD OUTPUT, LBI, LBO
V(PG)
Power good trip voltage
VO – 1.6%
V
VO ramping positive
50
Power good delay time
s
VO ramping negative
200
VOL
PG, LBO output low voltage
V(FB) = 1.1 × VO nominal, IOL = 1 mA
0.3
V
IOL
PG, LBO sink current
1
mA
PG, LBO output leakage current
V(FB) = VO nominal
0.01
0.25
A
Minimum supply voltage for valid
3
V
power good, LBI, LBO signal
VLBI
Low battery input trip voltage
Input voltage falling
1.256
V
ILBI
LBI input leakage current
10
100
nA
Low battery input trip-point
1.5
%
accuracy
VLBI,HYS Low battery input hysteresis
25
mV
(1)
Not Production tested
(2)
Device is not switching.
4
Copyright 2007–2008, Texas Instruments Incorporated
Product Folder Link(s): TPS62110-EP TPS62111-EP TPS62112-EP
相關(guān)PDF資料
PDF描述
V62/06637-17XE 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
VRP2-50E1A0 1-OUTPUT 250 W DC-DC REG PWR SUPPLY MODULE
VRP2-50E3A0G DC-DC REG PWR SUPPLY MODULE
WV3EG265M72EFSU262D4IN 128M X 72 DDR DRAM MODULE, 0.75 ns, ZMA200
WF2M16W-120DAQ5A 2M X 16 FLASH 5V PROM MODULE, 120 ns, CDSO56
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
V62-08631-01XE 制造商:TI 制造商全稱:Texas Instruments 功能描述:MIXED SIGNAL MICROCONTROLLER
V62-09601-01XE 制造商:TI 制造商全稱:Texas Instruments 功能描述:MIXED SIGNAL MICROCONTROLLER
V62-09620-01XA 制造商:TI 制造商全稱:Texas Instruments 功能描述:MIXED SIGNAL MICROCONTROLLER
V620H011M 制造商:OMRON Industrial Automation 功能描述: 制造商:Omron Corporation 功能描述:
V620H015M 制造商:OMRON Industrial Automation 功能描述: