參數(shù)資料
型號: V54C3128404VBI6I
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: GREEN, TSOP2-54
文件頁數(shù): 19/56頁
文件大?。?/td> 726K
代理商: V54C3128404VBI6I
26
V54C3128(16/80/40)4VB*I Rev.1.4 December 2007
ProMOS TECHNOLOGIES
V54C3128(16/80/40)4VB*I
6.2 Write Interrupted by a Read
(Burst Length = 4, CAS latency = 2, 3)
7. Burst Write with Auto-Precharge
Burst Length = 2, CAS latency = 2, 3)
COMMAND
NOP
WRITE A
READ B
NOP
tCK2, I/O’s
CAS latency = 2
DIN A0
tCK3, I/O’s
CAS latency = 3
DIN A0
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT B3
DOUT B0
DOUT B1
DOUT B2
DOUT B3
don’t care
DOUT B0
DOUT B1
DOUT B2
Input data must be removed from the I/O’s at least one clock
cycle before the Read dataAPpears on the outputs to avoid
data contention.
Burs t Lengt h = 2, CAS latency = 2, 3)
COMMAN
D
NOP
WRITEA
Auto-Precharge
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
BANKA
ACTIVE
NOP
DINA 0
DINA 1
I/O’s
Begin Autoprecharge
Bank canbe reactivated after t
*
t WR
tRP
NOP
*
RP
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