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參數(shù)資料
| 型號： | USF5J49 |
| 元件分類： | 晶閘管 |
| 英文描述： | 7.8 A, 600 V, SCR |
| 封裝： | LEAD FREE, 13-7F2A, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 317K |
| 代理商： | USF5J49 |
SF5G49, SF5J49, USF5G49, USF5J49
2005-09-05
1
TOSHIBA Thyristor Silicon Planar Type
SF5G49, SF5J49, USF5G49, USF5J49
Medium Power Control Applications
Repetitive peak off-state voltage: VDRM = 400V, 600 V
Repetitive peak reverse voltage: VRRM = 400V, 600 V
Average on-state current: IT (AV) = 5 A
Gate trigger current: IGT = 70 A max
Maximum Ratings
Characteristics
Symbol
Rating
Unit
SF5G49
USF5G49
400
Repetitive peak off-state
voltage and Repetitive
peak reverse voltage
(RGK = 330 )
SF5J49
USF5J49
VDRM
VRRM
600
V
SF5G49
USF5G49
500
Non-repetitive peak
reverse voltage
(non-repetitive
< 5 ms,
Tj = 0~125°C,
RGK = 330 )
SF5J49
USF5J49
VRSM
720
V
Average on-state current
IT (AV)
5
A
R.M.S on-state current
IT (RMS)
7.8
A
Peak one cycle surge on-state current
(non-repetitive)
ITSM
65 (50 Hz)
A
I
2t limit value
I
2t
20
A
2s
Peak gate power dissipation
PGM
0.5
W
Average gate power dissipation
PG (AV)
0.05
W
Peak forward gate voltage
VFGM
5
V
Peak reverse gate voltage
VRGM
5
V
Peak forward gate current
IGM
200
mA
Junction temperature
Tj
40~125
°C
Storage temperature range
Tstg
40~125
°C
Note: Should be used with gate resistance as shown below:
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
13-7F1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
13-F2A
Weight: 0.28 g (typ.)
Gate
Anode
Cathode
RGK <= 330
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|---|---|
| USF5J49 | 7.8 A, 600 V, SCR |
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| USF8G48 | 12.6 A, 400 V, SCR |
| USF8J48 | 12.6 A, 600 V, SCR |
| USM12G48 | 400 V, 12 A, TRIAC |
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