參數(shù)資料
型號(hào)： USF5J49
元件分類(lèi)： 晶閘管
英文描述： 7.8 A, 600 V, SCR
封裝： LEAD FREE, 13-F2A, 3 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 241K
代理商： USF5J49
SF5G49, SF5J49, USF5G49, USF5J49
2005-09-05
1
TOSHIBA Thyristor Silicon Planar Type
SF5G49, SF5J49, USF5G49, USF5J49
Medium Power Control Applications
Repetitive peak off-state voltage: VDRM = 400V, 600 V
Repetitive peak reverse voltage: VRRM = 400V, 600 V
Average on-state current: IT (AV) = 5 A
Gate trigger current: IGT = 70 A max
Maximum Ratings
Characteristics
Symbol
Rating
Unit
SF5G49
USF5G49
400
Repetitive peak off-state
voltage and Repetitive
peak reverse voltage
(RGK = 330 Ω)
SF5J49
USF5J49
VDRM
VRRM
600
V
SF5G49
USF5G49
500
Non-repetitive peak
reverse voltage
(non-repetitive
< 5 ms,
Tj = 0~125°C,
RGK = 330 Ω)
SF5J49
USF5J49
VRSM
720
V
Average on-state current
IT (AV)
5
A
R.M.S on-state current
IT (RMS)
7.8
A
Peak one cycle surge on-state current
(non-repetitive)
ITSM
65 (50 Hz)
A
I
2t limit value
I
2t
20
A
2s
Peak gate power dissipation
PGM
0.5
W
Average gate power dissipation
PG (AV)
0.05
W
Peak forward gate voltage
VFGM
5
V
Peak reverse gate voltage
VRGM
5
V
Peak forward gate current
IGM
200
mA
Junction temperature
Tj
40~125
°C
Storage temperature range
Tstg
40~125
°C
Note: Should be used with gate resistance as shown below:
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
13-7F1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
13-F2A
Weight: 0.28 g (typ.)
Gate
Anode
Cathode
RGK <= 330 Ω
相關(guān)PDF資料
PDF描述
USF5G49 7.8 A, 400 V, SCR
USF8G48 12.6 A, 400 V, SCR
USF8J48 12.6 A, 600 V, SCR
USM12G48 400 V, 12 A, TRIAC
USM12J48 600 V, 12 A, TRIAC
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