參數(shù)資料
型號(hào): UPG2008TB-E3
廠商: NEC Corp.
英文描述: GaAs INTEGRATED CIRCUIT
中文描述: 砷化鎵集成電路
文件頁(yè)數(shù): 8/10頁(yè)
文件大?。?/td> 60K
代理商: UPG2008TB-E3
Data Sheet PG10193EJ01V0DS
8
μ
PG2008TB
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220
°
C or higher
Preheating time at 120 to 180
°
C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260
°
C or below
: 10 seconds or less
: 60 seconds or less
: 120
±
30 seconds
: 3 times
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
Time at temperature of 200
°
C or higher
Preheating time at 120 to 150
°
C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 215
°
C or below
: 25 to 40 seconds
: 30 to 60 seconds
: 3 times
: 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature)
Time at peak temperature
Preheating temperature (package surface temperature) : 120
°
C or below
Maximum number of flow processes
Maximum chlorine content of rosin flux (% mass)
: 260
°
C or below
: 10 seconds or less
: 1 time
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
Soldering time (per side of device)
Maximum chlorine content of rosin flux (% mass)
: 350
°
C or below
: 3 seconds or less
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
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