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參數(shù)資料
| 型號： | UPD75P116CW |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 4-BIT, OTPROM, MICROCONTROLLER, PDIP64 |
| 封裝： | 0.750 INCH, SHRINK, PLASTIC, DIP-64 |
| 文件頁數(shù)： | 5/32頁 |
| 文件大小： | 286K |
| 代理商： | UPD75P116CW |
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13
PD75P116
Data Input
Write
Verify
Additional
Write
Address
Increment
Repeated X Times
Data Output
VPP
VDD
VDD + 1
VDD
X1
P40-P43
P50-P53
MD0
MD1
MD2
MD3
3.2
PROGRAM MEMORY WRITE PROCEDURE
The program memory writing procedure is shown below. High-speed write is possible.
(1)
Pull down a pin which is not used to VSS via the resistor. A low-level signal is input to the X1 pin.
(2)
Supply +5 V to the VDD and VPP pins.
(3)
10
s wait.
(4)
The program memory address 0 clear mode.
(5)
Supply +6 V and +12.5 V respectively to VDD and VPP.
(6)
The program inhibit mode.
(7)
Write data in the 1-ms write mode.
(8)
The program inhibit mode.
(9)
The verify mode. If written, proceed to (10); if not written, repeat (7) to (9).
(10) (Number of times written in (7) to (9): X)
× 1-ms additional write.
(11) The program inhibit mode.
(12) Update (+1) the program memory address by inputting 4 pulses to the X1 pin.
(13) Repeat (7) to (12) up to the last address.
(14) The program memory address 0 clear mode.
(15) Change the VDD and VPP pins voltage to +5 V.
(16) Power off.
The diagram below shows the procedure of the above (2) to (12).
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