參數(shù)資料
型號(hào)： UPD75P108BCW
廠商： NEC Corp.
英文描述： 4-BIT SINGLE-CHIP MICROCOMPUTER
中文描述： 4位單片機(jī)
文件頁(yè)數(shù)： 15/46頁(yè)
文件大小： 381K
代理商： UPD75P108BCW
15
μ
PD75P108B
4.2
PROGRAM MEMORY WRITE PROCEDURE
The program memory writing procedure is shown below. High-speed write is possible.
Pull down a pin which is not used to V
SS
via the resistor. A low-level signal is input to the X1 pin.
Supply +5 V to the V
DD
and V
PP
pins.
10
μ
s wait.
The program memory address 0 clear mode.
Supply +6 V and +12.5 V respectively to V
DD
and V
PP
.
The program inhibit mode.
Write data in the 1-ms write mode.
The program inhibit mode.
The verify mode. If written, proceed to (10); if not written, repeat (7) to (9).
(10) (Number of times written in (7) to (9): X) x 1-ms additional write.
(11) The program inhibit mode.
(12) Update (+1) the program memory address by inputting 4 pulses to the X1 pin.
(13) Repeat (7) to (12) up to the last address.
(14) The program memory address 0 clear mode.
(15) Change the V
DD
and V
PP
pins voltage to +5 V.
(16) Power off.
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
The diagram below shows the procedure of the above (2) to (12).
Data Input
Data Input
Write
Verify
Additional
Write
Address
Increment
Repeated X Times
Data Output
V
PP
V
PP
V
DD
V
DD
V
DD
+ 1
V
DD
X1
P40-P43
P50-P53
MD0
MD1
MD2
MD3
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