參數(shù)資料
型號(hào): UPD45128163G5-A10T-9JF
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
中文描述: 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: PLASTIC, TSOP2-54
文件頁(yè)數(shù): 16/86頁(yè)
文件大?。?/td> 774K
代理商: UPD45128163G5-A10T-9JF
Data Sheet E0348N10 (Ver. 1.0)
16
μ
PD45128163-T
(3/3)
Notes
Current state
/CS /RAS /CAS /WE
Address
Command
Action
Write recovering
H
×
×
×
×
DESL
Nop
Enter row active after t
DPL
L
H
H
H
×
NOP
Nop
Enter row active after t
DPL
L
H
H
L
×
BST
Nop
Enter row active after t
DPL
L
H
L
H
BA, CA, A10
READ/READA
Start read, Determine AP
8
L
H
L
L
BA, CA, A10
WRIT/WRITA
New write, Determine AP
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Write recovering
H
×
×
×
×
DESL
Nop
Enter precharge after t
DPL
with auto precharge
L
H
H
H
×
NOP
Nop
Enter precharge after t
DPL
L
H
H
L
×
BST
Nop
Enter precharge after t
DPL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3, 8
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Refreshing
H
×
×
×
×
DESL
Nop
Enter idle after t
RC
L
H
H
×
×
NOP/BST
Nop
Enter idle after t
RC
L
H
L
×
×
READ/WRIT
ILLEGAL
L
L
H
×
×
ACT/PRE/PALL
ILLEGAL
L
L
L
×
×
REF/SELF/MRS
ILLEGAL
Mode register
H
×
×
×
×
DESL
Nop
Enter idle after t
RSC
accessing
L
H
H
H
×
NOP
Nop
Enter idle after t
RSC
L
H
H
L
×
BST
ILLEGAL
L
H
L
×
×
READ/WRIT
ILLEGAL
L
L
×
×
×
ACT/PRE/PALL/
REF/SELF/MRS
ILLEGAL
Notes 1.
All entries assume that CKE was active (High level) during the preceding clock cycle.
If all banks are idle, and CKE is inactive (Low level),
μ
PD45128xxx will enter Power down mode.
All input buffers except CKE will be disabled.
Illegal to bank in specified states; Function may be legal in the bank indicated by Bank Address (BA),
depending on the state of that bank.
If all banks are idle, and CKE is inactive (Low level),
μ
PD45128xxx will enter Self refresh mode. All input
buffers except CKE will be disabled.
Illegal if t
RCD
is not satisfied.
Illegal if t
RAS
is not satisfied.
Must satisfy burst interrupt condition.
Must satisfy bus contention, bus turn around, and/or write recovery requirements.
Must mask preceding data which don't satisfy t
DPL
.
10.
Illegal if t
RRD
is not satisfied.
2.
3.
4.
Remark
H = High level, L = Low level,
×
= High or Low level (Don’t care), V = Valid data
5.
6.
7.
8.
9.
相關(guān)PDF資料
PDF描述
UPD45128163G5-A80-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128441G5-A10-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128163G5-A80L-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128163G5-A75L-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128441G5-A80L-9JF RAC5-SB(-E)(-ST) Series - Powerline Regulated AC-DC Converters; Output Voltage (Vdc): 12V; Features: Very Compact AC-DC Power Supply; 5 Watt PCB Mount Package; Universal Input Voltage Range; 3000VAC Isolation; Low Output Ripple and Noise; Short Circuit Protected; UL Certified
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPD45128163G5-A75-9JF 制造商:Elpida Memory Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
UPD45128841G5-A75-9JF 制造商:NEC Electronics Corporation 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP
UPD4516161AG5A109NF 制造商:NEC Electronics Corporation 功能描述:
UPD4516161AG5-A10-9NF 制造商:NEC Electronics Corporation 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP
UPD4528BC 制造商:Panasonic Industrial Company 功能描述:IC