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參數(shù)資料
| 型號(hào)： | UPC2713T-E3 |
| 廠商： | NEC Corp. |
| 英文描述： | 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
| 中文描述： | 1.2 GHz的低噪聲寬帶放大器硅雙極單片集成電路 |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大小： | 195K |
| 代理商： | UPC2713T-E3 |
4
m
PC2713T
TYPICAL CHARACTERISTICS (T
A
= +25 °C)
20
18
14
10
I
C
6
16
8
4
12
2
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
0
1
2
3
4
5
6
V
CC
– Supply Voltage – V
20
18
14
10
I
C
6
16
8
4
12
2
0
–60
CIRCUIT CURRENT vs.
OPERATING TEMPERATURE
0
20
100
T
opt
– Operating Temperature –
°
C
–40
–20
40
60
80
V
CC
= 5.0 V
35
G
P
30
20
15
25
0.1
0.3
1.0
3.0
f – Frequency – GHz
NOISE FIGURE AND INSERTION
POWER GAIN vs. FREQUENCY
6
4
N
2
10
8
10
V
CC
= 5.0 V
V
CC
= 4.5 V
V
CC
= 5.5 V
V
CC
= 5.0 V
NF
G
P
5.5 V
4.5 V
35
25
0.1
0.3
1.0
2.0
f – Frequency – GHz
20
G
P
INSERTION POWER GAIN vs. FREQUENCY
V
CC
= 5.0 V
30
T
A
= +85
°
C
T
A
= –40
°
C
T
A
= +25
°
C
I
ISOLATION vs. FREQUENCY
0.3
1.0
3.0
f – Frequency – GHz
V
CC
= 5.0 V
–20
–30
–40
–10
0.1
0.3
1.0
2.0
f – Frequency – GHz
–20
–30
–40
–10
0.1
INPUT RETURN LOSS, OUTPUT
RETURN LOSS vs. FREQUENCY
R
i
R
o
0
V
CC
= 5.0 V
RL
in
RL
out
0
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| UPC2714T-E3 | 1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPC2714 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| UPC2714T | 制造商:NEC 制造商全稱:NEC 功能描述:1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
| UPC2714TE3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| UPC2714T-E3 | 制造商:NEC 制造商全稱:NEC 功能描述:1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
| UPC2715 | 制造商:NEC 制造商全稱:NEC 功能描述:1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
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