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參數(shù)資料
| 型號(hào)： | UPC2713T-E3 |
| 廠商： | NEC Corp. |
| 英文描述： | 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
| 中文描述： | 1.2 GHz的低噪聲寬帶放大器硅雙極單片集成電路 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 195K |
| 代理商： | UPC2713T-E3 |
3
m
PC2713T
TEST CIRCUIT
50
IN
C
1
1
6
4
2, 3, 5
C
3
1 000 pF
V
CC
C
2
1 000 pF
50
OUT
1 000 pF
EXAMPLE OF APPLICATION CIRCUIT
50
IN
C
1
1
6
4
2, 3, 5
C
3
1 000 pF
V
CC
C
4
1 000 pF
C
5
1
6
4
2, 3, 5
C
6
1 000 pF
C
2
1 000 pF
50
OUT
1 000 pF
R
1
50 to 200
1 000 pF
To stabilize operation,
please connect R
1
, C
5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Capacitors for V
CC
, input and output pins
1 000 pF capacitors are recommendable as bypass capacitor for V
CC
pin and coupling capacitors for input/output
pins.
Bypass capacitor for V
CC
pin is intended to minimize V
CC
pin’s ground impedance. Therefore, stable bias can be
supplied against V
CC
fluctuation.
Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC.
To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF
capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling
capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2
p
fZs).]
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| UPC2714T-E3 | 1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPC2714 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| UPC2714T | 制造商:NEC 制造商全稱:NEC 功能描述:1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
| UPC2714TE3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| UPC2714T-E3 | 制造商:NEC 制造商全稱:NEC 功能描述:1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
| UPC2715 | 制造商:NEC 制造商全稱:NEC 功能描述:1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
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