參數(shù)資料
型號(hào)： UPA827TF-T1-A
廠商： NEC Corp.
英文描述： NPN SILICON EPITAXIAL TWIN TRANSISTOR
中文描述： NPN硅外延雙晶體管
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 161K
代理商： UPA827TF-T1-A
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
5
V
CEO
Collector to Emitter Voltage
V
3
V
EBO
Emitter to Base Voltage
V
2
I
C
Collector Current
mA
10
P
T
Total Power Dissipation
1 Element
2 Elements
mW
mW
30
60
T
J
Junction Temperature
°
C
150
T
STG
Storage Temperature
°
C
-65 to +150
Note: 1.Operation in excess of any one of these parameters
may result in permanent damage.
UPA827TF
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
T
(
Ambient Temperature, T
A
(
°
C)
COLLECTOR CURRENT vs.
DC BASE VOLTAGE
C
(
DC Base Voltage, V
BE
(V)
COLLECTOR CURRENT vs.
EMITTER VOLTAGE
C
(
Collector to Emitter Voltage, V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
D
F
Collector Current, lc (mA)
100
50
0
50
100
150
2 elements in total 60mW
Per element 30mW
50
40
30
20
10
0
0.5
1.0
V
CE
= 2 V
10
8
6
4
2
0
1.0
2.0
3.0
l
B
= 20
μ
A
60
μ
A
80
μ
A
100
μ
A
40
μ
A
500
200
100
50
20
10
1
2
5
10
20
50
100
V
CE
= 1 V
V
CE
= 2 V
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