參數(shù)資料
型號(hào)： UPA821TF
廠商： NEC Corp.
英文描述： NPN SILICON EPITAXIAL TWIN TRANSISTOR
中文描述： NPN硅外延雙晶體管
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 54K
代理商： UPA821TF
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
PARAMETERS
V
CBO
Collector to Base Voltage
V
CEO
Collector to Emitter Voltage
V
EBO
Emitter to Base Voltage
I
C
Collector Current
P
T
Total Power Dissipation
1 Die
2 Die
2
T
J
Junction Temperature
T
STG
Storage Temperature
UNITS
V
V
V
mA
RATINGS
20
12
3
100
mW
mW
°
C
°
C
150
200
150
-65 to +150
Note: 1.Operation in excess of any one of these parameters
may result in permanent damage.
2.When operating both devices, the power dissipation for
either device should not exceed 110 mW.
UPA821TF
TYPICAL PERFORMANCE CURVES
(T
A
= 25C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
T
(
Ambient Temperature, T
A
(
°
C)
COLLECTOR CURRENT vs.
DC BASE VOLTAGE
C
(
DC Base Voltage, V
BE
(V)
COLLECTOR CURRENT vs.
EMITTER VOLTAGE
C
(
Collector to Emitter Voltage, V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
D
F
Collector Current, lc (mA)
200
100
0
50
100
150
2EemensinTta
Pe Eemen
20
0.5
1.0
10
0
V
CE
= 3 V
25
20
15
10
5
0
5
10
l
B
=160
μ
A
140
μ
A
120
μ
A
100
μ
A
80
μ
A
60
μ
A
40
μ
A
20
μ
A
5.0
2.0
1.0
0.5
0.2
0.1
1
2
5
10
20
50
f = 1 MHz
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