參數(shù)資料
型號(hào)： UPA679TB
廠商： NEC Corp.
英文描述： N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述： N / P系列溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān)
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 141K
代理商： UPA679TB
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA679TB
N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16615EJ1V0DS00 (1st edition)
Date Published February 2003 NS CP(K)
Printed in Japan
2003
DESCRIPTION
The
μ
PA679TB is a switching device, which can be driven directly by a 2.5 V power source.
The
μ
PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
N-ch
R
DS(on)1
= 0.57
MAX. (V
GS
= 4.5
V, I
D
= 0.30
A)
R
DS(on)3
= 0.88
MAX. (V
GS
= 2.5
V, I
D
= 0.15 A)
P-ch
R
DS(on)1
= 1.45
MAX. (V
GS
=
4.5
V, I
D
=
0.20
A)
R
DS(on)3
= 2.98
MAX. (V
GS
=
2.5
V, I
D
=
0.15 A)
Two MOS FET circuits in same size package as SC-70
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA679TB
SC-88 (SSP)
Marking: YA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
/
20
±
12 /
m
12
±
0.35 /
m
0.25
±
1.40 /
m
1.00
0.2
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation (2 units)
Note2
I
D(DC)
A
I
D(pulse)
A
P
T
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board of 2500 mm
2
x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution
This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with
caution for electrostatic discharge.
V
ESD
=
±
100 V TYP. (C = 200 pF, R = 0
, Single pulse)
PACKAGE DRAWING (Unit: mm)
0.2
+0
-
0.15
+0.05
-
2
1
0.65
1.3
0.7
2.0 ±0.2
0.9 ±0.1
0 to 0.1
0.65
6
1
5
2
4
3
PIN CONNECTION (Top View)
6
5
4
1
2
3
1.
2.
3.
4.
5.
6.
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain 1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPA679TB-T1-A 功能描述:MOSFET N/P-CH 20V SC-70 6SSP RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類(lèi)型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱(chēng):SI7948DP-T1-GE3DKR
UPA679TB-T2-A 功能描述:MOSFET N/P-CH 20V SC-70 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類(lèi)型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱(chēng):SI7948DP-T1-GE3DKR
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