參數(shù)資料
型號(hào)： UPA861TD
廠商： NEC Corp.
英文描述： NECs NPN SILICON RF TWIN TRANSISTOR
中文描述： 鄰舍NPN硅射頻雙晶體管
文件頁(yè)數(shù)： 1/10頁(yè)
文件大小： 129K
代理商： UPA861TD
UPA861TD
NEC's NPN SILICON
RF TWIN TRANSISTOR
LOW VOLTAGE, LOW CURRENT OPERATION
LOW CAPACITANCE FOR WIDE TUNING RANGE
SMALL PACKAGE OUTLINE:
1.2 mm x 0.8 mm
LOW HEIGHT PROFILE:
Just 0.50 mm high
TWO DIFFERENT DIE TYPES:
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
IDEAL FOR >3 GHz OSCILLATORS
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
Package Outline TD
(TOP VIEW)
DESCRIPTION
NEC's UPA861TD contains one NE894 and one NE687 NPN
high frequency silicon bipolar chip. The NE894 is an excellent
oscillator chip, featuring high fT and low current, low voltage
operation. The NE687 is an excellent buffer transistor, featur-
ing low noise and high gain. NEC's new ultra small TD package
is ideal for all portable wireless applications where reducing
board space is a prime consideration. Each transistor chip is
independently mounted and easily configured for oscillator/
buffer amplifier and other applications.
California Eastern Laboratories
v
C1
Q2
Q1
B2
E2
E1
B1
C2
(Top View)
0
0
+
-
1
+
-
1
2
3
0
0
0
0
4
5
6
1.0±0.05
0.8
+0.07
-0.05
1
3
4
5
6
2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
PART NUMBER
PACKAGE OUTLINE
UPA861TD
TD
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
NF
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 1 V, I
C
= 10 mA
Gain Bandwidth at V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 0.5 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 1 V, I
C
=10 mA, f = 2 GHz
Noise Figure at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
nA
nA
100
100
140
70
10.0
110
12.0
0.4
9.0
1.5
GHz
pF
dB
dB
0.8
7.0
2.0
I
CBO
I
EBO
h
FE
f
T
Cre
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 1 V, I
C
= 5 mA
Gain Bandwidth at V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 0.5 V, I
E
= 0, f = 1 MHz
Insertion Power Gain
I
at V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
Noise Figure at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz, Z
s
= Z
opt
nA
nA
100
100
100
50
17.0
75
20.0
0.22
13.0
1.4
GHz
pF
dB
dB
0.30
|S
21E
|
2
E
|
2
NF
11.0
2.5
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes: 1. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
Q
Q
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPA861TD-A 功能描述:射頻雙極小信號(hào)晶體管 NPN Silicon RF Twin RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
UPA861TD-T3 制造商:California Eastern Laboratories (CEL) 功能描述:Trans GP BJT NPN 3V 0.03A/0.035A 6-Pin T/R
UPA861TD-T3-A 功能描述:射頻雙極小信號(hào)晶體管 NPN Silicon RF Twin RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
UPA862TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete
UPA862TD 功能描述:射頻雙極小信號(hào)晶體管 NPN Silicon RF Twin RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
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