參數(shù)資料
型號(hào)： UPA2791GR-E2-AT
廠商： NEC Corp.
英文描述： MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET
中文描述： MOS場(chǎng)效應(yīng)晶體管的開(kāi)關(guān)N溝道和P溝道功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 9/12頁(yè)
文件大小： 245K
代理商： UPA2791GR-E2-AT
Data Sheet G18207EJ2V0DS
9
μ
PA2791GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
D
0
-5
-10
-15
-20
-25
0
-0.5
-1
-1.5
-2
-2.5
-3
V
GS
=
10 V
4.5 V
Pulsed
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
D
-0.0001
-0.001
-0.01
-0.1
-1
-10
-100
0
-1
-2
-3
-4
V
DS
=
10 V
Pulsed
T
A
= 150
°
C
75
°
C
25
°
C
25
°
C
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
G
0
-0.5
-1
-1.5
-2
-2.5
-50
0
50
100
150
V
DS
=
10 V
I
D
=
1 mA
T
ch
- Channel Temperature -
°
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
f
0.001
0.01
0.1
1
10
V
DS
=
10 V
Pulsed
T
A
= 150
°
C
25
°
C
25
°
C
75
°
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
D
Ω
0
20
40
60
80
100
120
140
160
-1
-10
-100
V
GS
=
4.5 V
10 V
Pulsed
I
D
- Drain Current - A
D
Ω
0
20
40
60
80
100
120
140
160
0
-5
-10
-15
-20
I
D
=
3.0 A
Pulsed
V
GS
- Gate to Source Voltage - V
-100
μ
-1 m -10 m -100 m
-1 -10
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