參數(shù)資料
型號： UPA2791GR-E2-AT
廠商： NEC Corp.
英文描述： MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET
中文描述： MOS場效應(yīng)晶體管的開關(guān)N溝道和P溝道功率場效應(yīng)晶體管
文件頁數(shù)： 6/12頁
文件大小： 245K
代理商： UPA2791GR-E2-AT
Data Sheet G18207EJ2V0DS
6
μ
PA2791GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
D
0
5
10
15
20
25
0
0.5
1
1.5
2
2.5
3
V
GS
= 10 V
4.5 V
Pulsed
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
D
0.0001
0.001
0.01
0.1
1
10
100
0
1
2
3
4
V
DS
= 10 V
Pulsed
T
A
= 150
°
C
75
°
C
25
°
C
25
°
C
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
G
0
0.5
1
1.5
2
2.5
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
°
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
f
0.001
0.01
0.1
1
10
V
DS
= 10 V
Pulsed
T
A
= 150
°
C
25
°
C
25
°
C
75
°
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
D
Ω
0
20
40
60
80
100
1
10
100
V
GS
= 4.5 V
10 V
Pulsed
I
D
- Drain Current - A
D
Ω
0
20
40
60
80
100
0
5
10
15
20
I
D
= 3.0 A
Pulsed
V
GS
- Gate to Source Voltage - V
100
μ
1 m 10 m 100 m 1 10
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