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參數(shù)資料
| 型號(hào)： | UPA2712GR |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOSFET |
| 中文描述： | 開(kāi)關(guān)的P -溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | UPA2712GR |
Data Sheet G15980EJ2V0DS
2
μ
PA2712GR
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
30 V, V
GS
= 0 V
1
μ
A
Gate Leakage Current
I
GSS
V
GS
=
m
20 V, V
DS
= 0 V
V
DS
=
10 V, I
D
=
1 mA
m
100
2.5
nA
Gate Cut-off Voltage
V
GS(off)
1.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
=
10 V, I
D
=
5.0 A
7
15
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
=
10 V, I
D
=
5.0 A
10
13
m
R
DS(on)2
V
GS
=
4.5 V, I
D
=
5.0 A
15
21
m
R
DS(on)3
V
GS
=
4.0 V, I
D
=
5.0 A
19
26
m
Input Capacitance
C
iss
V
DS
=
10 V
2000
pF
Output Capacitance
C
oss
V
GS
= 0 V
550
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
340
pF
Turn-on Delay Time
t
d(on)
V
DD
=
15 V, I
D
=
5.0 A
10
ns
Rise Time
t
r
V
GS
=
10 V
16
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
92
ns
Fall Time
t
f
51
ns
Total Gate Charge
Q
G
V
DD
=
24 V
42
nC
Gate to Source Charge
Q
GS
V
GS
=
10 V
6
nC
Gate to Drain Charge
Q
GD
I
D
= 10 A
12
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 10 A, V
GS
= 0 V
0.82
V
Reverse Recovery Time
t
rr
I
F
= 10 A, V
GS
= 0 V
46
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
33
nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
=
20
→
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
=
2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS(
)
0
= 1 s
Duty Cycle
≤
1%
τ
τ
GS
Wave Form
DS
Wave Form
V
GS(
)
V
DS(
)
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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| UPA2714 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UPA2714GR Data Sheet | Data Sheet[11/2002] |
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