參數(shù)資料
型號(hào): UPA2711GR
廠商: NEC Corp.
英文描述: SWITCHING P-CHANNEL POWER MOSFET
中文描述: 開關(guān)的P -溝道功率MOSFET
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 149K
代理商: UPA2711GR
Data Sheet G15979EJ1V0DS
3
μ
PA2711GR
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
P
T
0
0.4
0.8
1.2
1.6
2
2.4
2.8
0
25
50
75
100
125
150
175
Mounted on ceramic
substrate of
1200 mm
2
x 2.2 mm
T
A
- Ambient Temperature -
°
C
I
D
-0.01
-0.1
-1
-10
-100
-0.01
-0.1
-1
-10
-100
I
D(pulse)
10 ms
Power Dissipation Limited
I
D(DC)
PW = 100
μ
s
1 ms
DC
R
DS(on)
Limited
(at V
GS
=
10 V)
100 ms
Single pulse, T
A
= 25°C
Mounted on ceramic substrate of
1200 mm
2
x 2.2 mm, 1unit
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
0.01
0.1
1
10
100
1000
Single pulse, T
A
= 25°C
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
R
th(ch-A)
= 62.5°C/W
PW - Pulse Width - s
100
μ
1 m
10 m
100 m
1
10
100
1000
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