參數(shù)資料
型號: UPA2680T1E
廠商: NEC Corp.
英文描述: MOSFET WITH SCHOTTKY BARRIER DIODE
中文描述: MOSFET的肖特基二極管
文件頁數(shù): 6/9頁
文件大?。?/td> 212K
代理商: UPA2680T1E
Data Sheet G17661EJ2V0DS
6
μ
PA2680T1E
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
D
Ω
0
20
40
60
80
100
120
140
0
2
4
6
8
10
Pulsed
I
D
= 3.0 A
1.5 A
V
GS
- Gate to Source Voltage - V
D
Ω
0
20
40
60
80
100
-50
-25
0
25
50
75
100 125 150
10 V
I
D
= 3.0 A
Pulsed
V
GS
= 4.5 V
T
ch
- Channel Temperature -
°
C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
i
,
o
,
r
10
100
1000
0.01
0.1
1
10
100
C
iss
V
GS
= 0 V
f = 1.0 MHz
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
d
,
r
,
d
,
f
1
10
100
0.1
1
10
V
DD
= 10 V
V
GS
= 4.5 V
R
G
= 10
Ω
t
d(off)
t
d(on)
t
r
t
f
I
D
- Drain Current - A
DYNAMIC INPUT CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
G
0
2
4
6
0
0.5
1
1.5
2
2.5
3
16 V
I
D
= 2.0 A
V
DD
= 10 V
4 V
Q
G
- Gate Charge - nC
F
0.01
0.1
1
10
0.4
0.6
0.8
1
V
GS
= 0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
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