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參數(shù)資料
| 型號： | UPA2680T1E |
| 廠商： | NEC Corp. |
| 英文描述： | MOSFET WITH SCHOTTKY BARRIER DIODE |
| 中文描述： | MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 212K |
| 代理商： | UPA2680T1E |
Data Sheet G17661EJ2V0DS
3
μ
PA2680T1E
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C, unless otherwise specified)
MOSFET
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
12 V, V
DS
= 0 V
±
10
μ
A
Gate to Source Threshold Voltage
Forward Transfer Admittance
Note
V
GS(th)
V
DS
= V
GS
, I
D
= 0.25 mA
0.6
2.0
V
| y
fs
|
V
DS
= 10 V, I
D
= 1.5 A
1.0
3.6
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 3.0 A
38
50
m
Ω
R
DS(on)2
V
GS
= 4.5 V, I
D
= 3.0 A
44
60
m
Ω
Input Capacitance
C
iss
V
DS
= 10 V,
190
pF
Output Capacitance
C
oss
V
GS
= 0 V,
90
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
33
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V, I
D
= 1.5 A,
9.0
ns
Rise Time
t
r
V
GS
= 4.5 V,
7.0
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
Ω
16
ns
Fall Time
t
f
4.0
ns
Total Gate Charge
Q
G
V
DD
= 16 V,
3.1
nC
Gate to Source Charge
Q
GS
V
GS
= 4.5 V,
0.6
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Q
GD
I
D
= 2.0 A
1.1
nC
V
F(S-D)
I
F
= 3.0 A, V
GS
= 0 V
0.85
V
Note
Pulsed: PW
≤
350
μ
s, Duty Cycle
≤
2%
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG.
50
Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
Schottky Barrier Diode
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
F
= 1.0 A
0.36
0.39
V
Reverse Current
I
R
V
R
= 5 V, T
A
= 100
°
C
15
mA
Terminal Capacitance
C
T
f = 1.0 MHz, V
R
= 10 V
36
pF
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