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參數(shù)資料
| 型號(hào)： | UPA1917 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 73K |
| 代理商： | UPA1917 |
Data Sheet G15925EJ1V0DS
5
μ
PA1917
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
20
40
60
80
100
120
140
-0.01
-0.1
-1
-10
Pulsed
V
GS
=
1.8 V
25
°
C
25
°
C
75
°
C
T
A
= 125
°
C
20
40
60
80
100
0
- 2
- 4
- 6
- 8
- 10
Pulsed
I
D
=
3.0 A
R
D
I
D
- Drain Current - A
R
D
V
GS
– Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
20
40
60
80
100
-50
0
50
100
150
Pulsed
I
D
=
3.0 A
V
GS
= -1.8 V
(I
D
=
1.5 A)
4.5 V
2.5 V
10
100
1000
10000
-0.1
-1
-10
-100
f = 1MHz
V
GS
= 0 V
C
iss
C
rss
C
oss
R
D
T
ch
– Channel Temperrature -
°
C
C
i
,
o
,
r
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1
10
100
1000
-0.1
-1
-10
V
DD
=
15 V
V
GS
=
4.0 V
R
G
= 10
t
f
t
d(off)
t
d(on)
t
r
0
- 1
- 2
- 3
- 4
- 5
0
2
4
6
8
I
D
=
6.0 A
V
DD
=
4 V
10 V
16 V
t
d
,
r
,
d
,
f
I
D
- Drain Current - A
V
G
Q
G
– Gate Charge - nC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1917TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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| UPA1918TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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