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參數(shù)資料
| 型號(hào)： | UPA1917 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 73K |
| 代理商： | UPA1917 |
Data Sheet G15925EJ1V0DS
4
μ
PA1917
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
- 4
- 8
- 12
- 16
- 20
0
-0.2
-0.4
-0.6
-0.8
-1
Pulsed
1.8 V
V
GS
=
4.5 V
2.5 V
I
D
-0.00001
-0.0001
-0.001
-0.01
-0.1
-1
-10
-100
0
-1
-2
-3
Pulsed
V
DS
=
10 V
T
A
= 125
°
C
75
°
C
25
°
C
25
°
C
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
-0.3
-0.8
-1.3
-50
0
50
100
150
V
DS
=
10 V
I
D
=
1 mA
|
f
0.01
0.1
1
10
100
-0.01
-0.1
-1
-10
-100
Pulsed
V
DS
=
10 V
T
A
=
25
°
C
25
°
C
75
°
C
125
°
C
T
ch
- Channel Temperature -
°
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs.DRAIN CURRENT
20
40
60
80
100
120
140
-0.01
-0.1
-1
-10
-100
Pulsed
V
GS
=
4.5 V
-25
°
C
25
°
C
75°C
T
A
= 125
°
C
20
40
60
80
100
120
140
-0.01
-0.1
-1
-10
-100
Pulsed
V
GS
=
2.5 V
25
°
C
25
°
C
75
°
C
T
A
= 125
°
C
R
D
I
D
– Drain Current - A
R
D
I
D
- Drain Current - A
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