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參數(shù)資料
| 型號： | UPA1916 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應晶體管開關 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | UPA1916 |
Data Sheet G15635EJ1V0DS
5
μ
PA1916
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
1
0.1
1
10
10
100
1000
V
DD
=
6.0 V
V
GS
=
4.0
V
R
G
= 10
t
d(on)
t
d(off)
t
f
t
r
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
°
C
1000
100
10
1
0.001
1000
100
10
1
0.1
0.01
Single Pulse
Without board
Mounted on 250mm
2
×
35 m copper pad
connected to drain electrode in
50mm
×
50mm
×
1.6mm FR-4 board
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
5
I
D
=
4.5 A
Q
G
- Gate Charge - nC
V
G
2
4
6
8
10
4
3
2
1
00
V
DD
=
10
V
6.0
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
S
0.4
0.6
0.8
1.0
1.2
100
10
1
0.1
0.01
0.1
1.0
10000
1000
100
10
10
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
i
,
o
,
r
V
DS
- Drain to Source Voltage - V
C
oss
C
iss
C
rss
f = 1
MHz
V
GS
= 0
V
相關PDF資料 |
PDF描述 |
|---|---|
| UPA1916TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2001C | NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY |
| UPA2002C | NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY |
| UPA2003C | NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1916TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1917 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1917TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1918 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1918TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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