參數(shù)資料
型號(hào): UPA1916
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場(chǎng)效應(yīng)晶體管開關(guān)
文件頁數(shù): 3/8頁
文件大小: 62K
代理商: UPA1916
Data Sheet G15635EJ1V0DS
3
μ
PA1916
TYPICAL CHARACTERISTICS (T
A
= 25°C)
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
=
V
I
D
=
1
10
50
0
50
100
150
0.2
0.7
1.2
30
0
0
60
90
120
150
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
d
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
10
100
I
D
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.01
0.1
PW=1ms
10ms
100ms
5s
R
DSon
=
(@V
GS
45
V
I
D(pulse)
I
D(DC)
Single Pulse
Mounted on 250 mm x 35 m copper
pad connected to drain erectrode in
50 mm x 50 mm x 1.6 mm FR-4 board.
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|
y
f
|
V
DS
=
10
V
0.01
0.1
1
10
100
100
10
1
0.1
0.01
T
A
=
25
C
25
C
75
C
125
C
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
100
10
1
0.1
0.01
0.001
0.0001
0.00001
0
1
2
3
V
DS
=
10 V
T
A
= 125
C
75
C
T
A
= 25
C
25
C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.2
0
0
0.4
0.6
0.8
1
20
16
12
8
4
V
GS
=
4.5 V
4.0 V
Pulsed
2.5 V
1.8 V
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