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參數(shù)資料
| 型號： | UPA1902TE |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 132K |
| 代理商： | UPA1902TE |
Data Sheet G16634EJ1V0DS
4
μ
PA1902
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
5
10
15
20
25
30
0
0.1
0.2
0.3
0.4
0.5
0.6
Pulsed
V
GS
= 10 V
4.5 V
V
DS
- Drain to Source Voltage - V
I
D
0.0001
0.001
0.01
0.1
1
10
100
0
1
2
3
4
V
DS
= 10 V
Pulsed
T
A
= 125°C
75°C
25°C
25°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
1.4
1.9
2.4
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1.0 mA
T
ch
- Channel Temperature -
°
C
|
f
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
= 10 V
Pulsed
T
A
=
25°C
25°C
75°C
125°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
D
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
D
0
20
40
60
0.01
0.1
1
10
100
V
GS
= 10 V
Pulsed
T
A
= 125°C
75°C
25°C
25°C
I
D
- Drain Current - A
0
20
40
60
0.01
0.1
1
10
100
V
GS
= 4.5 V
Pulsed
T
A
= 125°C
75°C
25°C
25°C
I
D
- Drain Current - A
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