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參數(shù)資料
| 型號(hào)： | UPA1911ATE |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 382K |
| 代理商： | UPA1911ATE |
2001
MOS FIELD EFFECT TRANSISTOR
μ
PA1911A
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
G15044EJ1V0DS00 (1st edition)
April 2001 NS CP(K)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The
μ
PA1911A is a switching device which can be driven
directly by a 2.5
V power source.
The
μ
PA1911A features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
Can be driven by a 2.5 V power source
Low on-state resistance
R
DS(on)1
= 115 m
MAX. (V
GS
= –4.5
V, I
D
= –1.5 A)
R
DS(on)2
= 120 m
MAX. (V
GS
= –4.0
V, I
D
= –1.5 A)
R
DS(on)3
= 190 m
MAX. (V
GS
= –2.5
V, I
D
= –1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1911ATE
Note
SC-95 (Mini Mold Thin Type)
Note
Marking: TK
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
–20
#
12
#
2.5
#
10
0.2
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
V
Drain Current (DC)
Drain Current (pulse)
Note1
I
D(DC)
A
I
D(pulse)
A
Total Power Dissipation
Total Power Dissipation (T
A
= 25°C)
Note2
P
T1
W
P
T2
2
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board, t
≤
5
sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
2
1
0.95
1
2
3
6
5
4
1.9
2.9 ±0.2
0.32
+0.1
0.95
0
+
–
1
, 2, 5, 6 : Drain
3
4
: Gate
: Source
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA1911 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1911TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1917 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1917TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1951 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1911ATE-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1911TE | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1912 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1912TE | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1913 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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