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| 型號(hào)： | UPA1853GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | CONN HDR 14 PIN DIP .100 CTR STR LAT |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | UPA1853GR-9JG |
Data Sheet D12968EJ1V0DS00
3
μ
PA1853
TYPICAL CHARACTERISTICS (T
A
= 25°C)
30
T
A
- Ambient Temperature -
C
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
FORWARD BIAS SAFE OPERATING AREA
10.0
100.0
I
D
1.0
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.1
0.01
Single Pulse
Mounted on Ceramic
Substrate of 5000mm x 1.1mm
P
D
(FET1) : P
D
(FET2) = 1:1
I
D
(pulse)
I
D
(
DC
)
R
DSon
Lmt10
(@V
GS
=
V
100ms
DC
10
ms
PW
=
1
ms
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.2
0
0.8
1
0.4
0.6
2
0
10
6
Pulsed
4
8
V
GS
=
10 V
4.0 V
4.5 V
10
1
0.1
0.01
0.001
0.0001
0
1.0
V
GS
- Gate to Source Voltage - V
2.0
3.0
TRANSFER CHARACTERISTICS
I
D
4.0
V
DS
=
10 V
T
A
= 125 C
75 C
25 C
25
C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
DS
=
10 V
I
D
=
1 mA
50
50
100
0
150
2
1.2
1
1.4
1.6
1.8
10
100
1
I
D
- Drain Current - A
|
f
|
1
10
0.1
0.1
100
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
T
A
=
25
C
25
C
75
C
125
C
V
DS
=
10 V
#
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