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參數(shù)資料
| 型號： | UPA1853GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | CONN HDR 14 PIN DIP .100 CTR STR LAT |
| 中文描述： | P溝道MOS場效應晶體管開關(guān) |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 67K |
| 代理商： | UPA1853GR-9JG |
Data Sheet D12968EJ1V0DS00
2
μ
PA1853
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I
DSS
V
DS
= –30 V, V
GS
= 0
V
–10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
#
20 V, V
DS
= 0
V
#
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= –10
V, I
D
= –1 mA
–1.0
–1.7
–2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= –10
V, I
D
= –1.5
A
1
3.6
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= –10
V, I
D
= –1.5
A
64
85
m
R
DS(on)2
V
GS
= –4.5
V, I
D
= –1.5
A
114
152
m
R
DS(on)3
V
GS
= –4.0
V, I
D
= –1.5
A
135
180
m
Input Capacitance
C
iss
V
DS
= –10
V
520
pF
Output Capacitance
C
oss
V
GS
= 0
V
200
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
82
pF
Turn-on Delay Time
t
d(on)
V
DD
= –10
V
60
ns
Rise Time
t
r
I
D
= –1.5
A
220
ns
Turn-off Delay Time
t
d(off)
V
GS(on)
= –10
V
800
ns
Fall Time
t
f
R
G
= 10
620
ns
Total Gate Charge
Q
G
V
DD
= –24
V
12
nC
Gate to Source Charge
Q
GS
I
D
= –2.5 A
2
nC
Gate to Drain Charge
Q
GD
V
GS
= –10 V
3
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 2.5 A, V
GS
= 0
V
0.73
V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
R
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1 %
GS
Wave Form
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
R
G
= 10
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
#
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