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參數(shù)資料
| 型號(hào)： | UPA1802GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 68K |
| 代理商： | UPA1802GR-9JG |
Data Sheet D12966EJ1V0DS00
3
μ
PA1802
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
30
T
A
- Ambient Temperature -
C
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
FORWARD BIAS SAFE OPERATING AREA
10
100
I
D
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.01
0.1
PW
=
1ms
10
ms
100ms
DC
R
=
(@V
GS
45
V
I
D(pulse)
I
D(DC)
T
A
= 25
C
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm x 1.1 mm
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0
0.4
0.6
0.8
10
0.2
20
25
30
15
5
Pulsed
V
GS
= 4.5 V
4.0 V
2.5 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
10
1
0.1
0.01
0.001
0.0001
0.00001
0
0.5
2
1
1.5
V
DS
= 10 V
T
A
= 125C
75C
25C
25C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
DS
= 10 V
I
D
= 1 mA
50
50
100
0
150
1
1.5
0.5
0
0.1
1
10
0.01
0.001
V
DS
= 10 V
I
D
- Drain Current - A
|
f
|
0.1
1
0.01
10
75
C
125
C
T
A
=
25
C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
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