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參數(shù)資料
| 型號： | UPA1809GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 64K |
| 代理商： | UPA1809GR-9JG |
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
MOS FIELD EFFECT TRANSISTOR
μ
PA1809
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16273EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The
μ
PA1809 is a switching device which can be
driven directly by a 4.0 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as DC/DC Converters and power
management of notebook computers and so on.
FEATURES
4.0 V drive available
Low on-state resistance
R
DS(on)1
= 21 m
MAX. (V
GS
= 10 V, I
D
= 4.0 A)
R
DS(on)2
= 29 m
MAX. (V
GS
= 4.5 V, I
D
= 4.0 A)
R
DS(on)3
= 32 m
MAX. (V
GS
= 4.0 V, I
D
= 4.0 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1809GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
I
D(DC)
±8.0
A
I
D(pulse)
±32
A
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 5000
mm
2
x 1.1
mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1
4
8
5
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0
±
0.1
1
2, 3
4
5
6, 7
8
:Drain1
:Source1
:Gate2
:Source2
:Drain2
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
+0.03
0.25
0.5
0.6
+0.15
3
°
+5
°
–3
°
1.2 MAX.
1.0±0.05
0.1±0.05
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
4
:Gate
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