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參數(shù)資料
| 型號(hào)： | UPA1763 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 切換雙N溝道功率MOS FET工業(yè)用 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | UPA1763 |
Data Sheet G14056EJ1V0DS00
3
μ
PA1763
TYPICAL CHARACTERISTICS (T
A
= 25
°
C, All terminals are connected.)
FORWARD TRANSFER CHARACTERISTICS
V
GS
-
Gate to Source Voltage - V
I
D
0.001
0.01
0.1
0
1
1.5
2
2.5
3
3.5
4
4.5
5
Pulsed
V
DS
=
10
V
1
10
100
T
A
= 150 C
T
A
= 75 C
T
A
= 25 C
T
A
=
25 C
1.5
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0
0.2
0.6
1.0
1.4
0.8
1.2
1.6
10
0.4
Pulsed
0
5
20
30
25
V
GS
= 4.5
V
V
GS
= 4.0
V
V
GS
= 10
V
15
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
f
|
V
= 10 V
Pulsed
1
1
10
100
10
100
0.1
0.1
T
A
= 75
C
T
A
= 150
C
T
A
=
25
C
T
A
= 25
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
V
GS
- Gate to Source Voltage - V
R
D
20
10
15
Pulsed
0
5
140
120
0
160
100
80
60
40
180
I
D
= 4.5 A
I
D
= 2.3
A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
1
10
100
0.1
0.12
0.1
0.08
0.06
0.04
0.02
0
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 2.3 A
V
GS
= 4.0 V
Pulsed
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
V
G
V
DS
=10 V
I
D
= 1 mA
75
50
25
0
150 175
50
25
100 125
75
0
1.5
1
0.5
3
2.5
2
#
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1763G | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1763G-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1763G-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1763G-E1-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1763G-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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