參數(shù)資料
型號(hào): UMY1N
廠商: Rohm CO.,LTD.
英文描述: Emitter common (dual transistors)
中文描述: 發(fā)射極常見(jiàn)(雙晶體管)
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 98K
代理商: UMY1N
EMY1 / UMY1N / FMY1A
Transistors
0.2
20
10
0.5
1
2
5
10
20
50 100 200
50
100
200
500
V
CE
=5V
3V
1V
Ta=25
C
D
F
COLLECTOR CURRENT : I
C
(mA)
Fig.13 DC current gain vs. collector
current ( I )
0.2
0.5
1
2
5
10
20
50 100 200
20
10
50
100
200
500
25
C
55
C
Ta=100
C
V
CE
=5V
D
F
COLLECTOR CURRENT : I
C
(mA)
Fig.14 DC current gain vs. collector
current ( II )
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100 200
I
C
/I
B
=50
20
10
Ta=25
C
C
C
COLLECTOR CURRENT : I
C
(mA)
Fig.15 Collector-emitter saturation
voltage vs. collector current ( I )
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100 200
I
C
/I
B
=10
Ta=100
C
25
C
55
C
C
C
COLLECTOR CURRENT : I
C
(mA)
Fig.16 Collector-emitter saturation
voltage vs. collector current ( II )
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100
I
C
/I
B
=50
Ta=100
C
25
C
55
C
C
C
COLLECTOR CURRENT : I
C
(mA)
Fig.17 Collector-emitter saturation
voltage vs. collector current ( III )
50
0.5
1
2
5
10
20
50
100
100
200
500
Ta=25
C
V
CE
=6V
EMITTER CURRENT : I
E
(mA)
T
T
Fig.18 Gain bandwidth product vs.
emitter current
0.2
0.5
1
2
5
10
20
50
1
2
5
10
20
Cib
Cob
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
Fig.19 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
C
E
(
Ta=25
C
f
=
1MHz
I
E
=0A
I
C
=0A
0.2
0.5
1
2
5
10
10
20
50
100
200
EMITTER CURRENT : I
E
(mA)
Fig.20 Base-collector time constant vs.
emitter current
b
Ta=25
C
f=32MH
Z
V
CB
=6V
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