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參數(shù)資料
| 型號： | UMY1N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Emitter common (dual transistors) |
| 中文描述： | 發(fā)射極常見（雙晶體管） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 98K |
| 代理商： | UMY1N |
EMY1 / UMY1N / FMY1A
Transistors
D
F
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current ( I )
500
200
100
50
0.2
0.5
1
2
5
10
20
50
100
Ta=25
C
V
CE
=
5V
3V
1V
500
200
100
50
0.2
0.5
1
2
5
10
20
50
100
V
CE
=
6V
Ta=100
C
40
C
25
C
D
F
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs. collector
current ( II )
0.1
0.2
0.5
1
2
5
10
20
50
100
1
0.5
0.2
0.05
Ta=25
C
I
C
/I
B
=50
20
10
COLLECTOR CURRENT : I
C
(mA)
C
C
V
Fig.6 Collector-emitter saturation
voltage vs. collector current ( I )
0.1
0.2
0.5
1
2
5
10
20
50
100
1
0.5
0.2
0.05
l
C
/l
B
=10
Ta=100
C
25
C
40
C
C
C
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( II )
50
100
0.5
20
50
100
200
500
1000
1
2
5
10
Ta=25
C
V
CE
=
12V
EMITTER CURRENT : I
E
(mA)
T
T
Fig.8 Gain bandwidth product vs.
emitter current
-0.5
-20
2
5
10
-1
-2
-5
-10
20
Cib
Cob
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
C
E
(
Ta=25
C
f
=
1MHz
I
E
=0A
I
C
=0A
Tr
2
(NPN)
50
0
0.1
0.2
0.5
2
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
5
10
T
C
V
CE
=
6V
2
C
5
C
C
C
m
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.10 Grounded emitter propagation
characteristics
0
20
40
60
80
100
0.4
0.8
1.2
1.6
2.0
0
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.20mA
Ta=25
C
I
B
=0A
0.40mA
0.50mA
C
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.11 Grounded emitter output
characteristics ( I )
0
0
2
8
10
4
8
12
16
4
6
20
I
B
=0A
Ta=25
C
3
μ
A
6
μ
A
9
μ
A
12
μ
A
15
μ
A
18
μ
A
21
μ
A
24
μ
A
27
μ
A
30
μ
A
C
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.12 Grounded emitter output
characteristics ( II )
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