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參數(shù)資料
| 型號： | UMX1NTR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 81K |
| 代理商： | UMX1NTR |
EMX1 / UMX1N / IMX1
Transistors
2/3
!
Electrical characteristics (Ta = 25
°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
Cob
Min.
60
50
7
120
2
0.1
560
0.4
3.5
VIC
=50
A
IC
=1mA
IE
=50
A
VCB
=60V
VEB
=7V
VCE
=6V, IC=1mA
IC/IB
=50mA/5mA
V
A
V
PF
Typ. Max. Unit
Conditions
fT
180
VCE
=12V, IE=
2mA, f=100MHz
VCB
=12V, IE=0A, f=1MHz
MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Output capacitance
!
Packaging specifications
Package
Code
TR
T110
3000
Taping
Basic ordering
unit (pieces)
UMX1N
T2R
8000
EMX1
IMX1
Type
!
Electrical characteristic curves
0
0.1
0.2
0.5
2
20
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
5
10
VCE=
6V
COLLECTOR
CURRENT
:
I
C
(
mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1 Grounded emitter propagation
characteristics
25
C
55
C
Ta=100
C
0
20
40
60
80
100
0.4
0.8
1.2
1.6
2.0
0
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25C
IB=0A
0.40mA
0.50mA
0.45mA
Fig.2 Grounded emitter output
characteristics ( I )
0
2
8
10
4
8
12
16
4
6
20
IB=0A
Ta=25C
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
3
A
6
A
9
A
12
A
15
A
18
A
21
A
24
A
27
A
30
A
Fig.3 Grounded emitter output
characteristics ( II )
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UMX2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 40V V(BR)CEO | 100MA I(C) | SO |
| UMX21N | 制造商:ROHM 制造商全稱:Rohm 功能描述:High transition frequency (dual transistors) |
| UMX-269-D16 | 制造商:MICRO 功能描述: |
| UMX2N | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose (dual transistors) |
| UMX2NTR | 功能描述:兩極晶體管 - BJT DUAL NPN 50V 150MA SOT-363 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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