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參數(shù)資料
| 型號： | UMX1NTR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 81K |
| 代理商： | UMX1NTR |
EMX1 / UMX1N / IMX1
Transistors
1/3
General purpose transistors
(dual transistors)
EMX1 / UMX1N / IMX1
!
Features
1) Two 2SC2412K chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!
Structure
Epitaxial planar type
NPN silicon transistor
!
Equivalent circuit
EMX1 / UMX1N
IMX1
(3)
(2)
(1)
(4)
(6)
(5)
Tr2
Tr1
(3)
(2)
(1)
(4)
(6)
(5)
Tr2
Tr1
The following characteristics apply to both Tr1 and Tr2.
!
Absolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
Limits
Unit
VCBO
60
V
50
V
VCEO
VEBO
7
IC
mA
150
Tj
150
C
Tstg
55+150
C
PC
EMX1, UMX1N
150 (TOTAL)
mW
IMX1
300 (TOTAL)
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power
dissipation
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
!
External dimensions (Units : mm)
ROHM : EMT6
EMX1
ROHM : UMT6
EIAJ : SC-88
UMX1N
Abbreviated symbol : X1
ROHM : SMT6
EIAJ : SC-74
IMX1
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
( 6
)
( 5
)
( 4
)
0.3to0.6
0.15
0.3
1.1
0.8
0to0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
1.0
1.6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UMX2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 40V V(BR)CEO | 100MA I(C) | SO |
| UMX21N | 制造商:ROHM 制造商全稱:Rohm 功能描述:High transition frequency (dual transistors) |
| UMX-269-D16 | 制造商:MICRO 功能描述: |
| UMX2N | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose (dual transistors) |
| UMX2NTR | 功能描述:兩極晶體管 - BJT DUAL NPN 50V 150MA SOT-363 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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