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參數(shù)資料
| 型號： | UMT2222A |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | NPN Medium Power Transistor (Switching) |
| 中文描述： | npn型中等功率晶體管（開關(guān)） |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 79K |
| 代理商： | UMT2222A |
UMT2222A / SST2222A / MMST2222A / PN2222A
Transistors
1
10
100
1000
0.8
1.2
1.8
1.6
0.4
0
B
B
(
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
°
C
V
CE
=
10V
Fig.7 Grounded emitter propagation
characteristics
1.0
10
100
1000
100
1000
10
T
(
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
°
C
I
C
/ I
B
=
10
V
CC
=
30V
10V
Fig.8 Turn-on time vs. collector
current
1.0
10
100
1000
100
500
5
10
R
(
COLLECTOR CURRENT : Ic
(mA)
Ta
=
25
°
C
V
CC
=
30V
I
C
/ I
B
=
10
Fig.9 Rise time vs. collector
current
1.0
10
100
1000
100
1000
10
S
(
COLLECTOR CURRENT : Ic
(mA)
Ta
=
25
°
C
V
CC
=
30V
I
C
=
10I
B1
=
10I
B2
Fig.10 Storage time vs. collector
current
1.0
10
100
1000
100
1000
10
F
COLLECTOR CURRENT : Ic
(mA)
Ta
=
25
°
C
V
CC
=
30V
I
C
=
10I
B1
=
10I
B2
Fig.11 Fall time vs. collector
current
0.1
1.0
10
100
10
100
1
C
(
REVERSE BIAS VOLTAGE
(V)
Ta
=
25
°
C
f
=
1MHz
Cib
Cob
Fig.12 Input / output capacitance
vs. voltage
1
10
100
1000
10
1
100
0.1
C
C
(
COLLECTOR CURRENT : Ic
(mA)
Ta
=
25
°
C
100MHz
200MHz
250MHz 300MHz
250MHz
Fig.13 Gain bandwidth product
1.0
10
100
1000
100
1000
C
(
10
COLLECTOR CURRENT : Ic
(mA)
Ta
=
25
°
C
V
CE
=
10V
Fig.14 Gain bandwidth product
vs. collector current
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| UMT2222A_07 | 制造商:ROHM 制造商全稱:Rohm 功能描述:NPN Medium Power Transistor (Switching) |
| UMT2222AT106 | 功能描述:兩極晶體管 - BJT NPN 40V 0.6A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| UMT2751.0 | 制造商:CLARE 制造商全稱:Clare, Inc. 功能描述:HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS |
| UMT2751.5 | 制造商:CLARE 制造商全稱:Clare, Inc. 功能描述:HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS |
| UMT2752.0 | 制造商:CLARE 制造商全稱:Clare, Inc. 功能描述:HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS |
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