- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358519 > UGB18BCT-HE3/45 (VISHAY SEMICONDUCTORS) 9 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB PDF資料下載
參數(shù)資料
| 型號： | UGB18BCT-HE3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 9 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 142K |
| 代理商： | UGB18BCT-HE3/45 |
UG(F,B)18ACT thru UG(F,B)18DCT
Vishay General Semiconductor
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88759
Revision: 09-Nov-07
Note:
(1) Pulse test: 300
μs pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
UG18ACT
UG18BCT
UG18CCT
UG18DCT
UNIT
Maximum instantaneous
forward voltage per diode
(1)
9.0 A
20 A
5.0 A
T
J
= 100 °C
V
F
1.1
1.2
0.95
V
Maximum DC reverse
current at rated DC blocking
voltage per diode
T
A
= 25 °C
T
A
= 100 °C
I
R
10
300
μA
Maximum reverse recovery
time per diode
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
t
rr
20
ns
Maximum reverse recovery
time per diode
I
F
= 9.0 A, V
R
= 30 V,
dI/dt = 50 A/μs,
I
rr
= 10 % I
RM
T
J
= 25 °C
T
J
= 100 °C
t
rr
30
50
ns
Maximum stored
charge per diode
I
F
= 9.0 A, V
R
= 30 V,
dI/dt = 50 A/μs,
I
rr
= 10 % I
RM
T
J
= 25 °C
T
J
= 100 °C
Q
rr
20
45
nC
Typical junction capacitance
per diode
at 4.0 V, 1 MHz
C
J
30
pF
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG18
UGF18
UGB18
UNIT
Typical thermal resistance from junction to case per diode
R
θ
JC
4.0
6.0
4.0
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
UG18DCT-E3/45
1.85
45
50/tube
Tube
ITO-220AB
UGF18DCT-E3/45
2.00
45
50/tube
Tube
TO-263AB
UGB18DCT-E3/45
1.35
45
50/tube
Tube
TO-263AB
UGB18DCT-E3/81
UG18DCTHE3/45
(1)
UGF18DCTHE3/45
(1)
UGB18DCTHE3/45
(1)
UGB18DCTHE3/81
(1)
1.35
81
800/reel
Tape and reel
TO-220AB
1.85
45
50/tube
Tube
ITO-220AB
2.00
45
50/tube
Tube
TO-263AB
1.35
45
50/tube
Tube
TO-263AB
1.35
81
800/reel
Tape and reel
相關PDF資料 |
PDF描述 |
|---|---|
| UH2C-E3/52T | 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA |
| UIS1813HCM-122F | 1 ELEMENT, 1.15 uH, GENERAL PURPOSE INDUCTOR, SMD |
| UIS1813HCM-122 | 1 ELEMENT, 1.15 uH, GENERAL PURPOSE INDUCTOR, SMD |
| UIS1813HCM-331 | 1 ELEMENT, 0.33 uH, GENERAL PURPOSE INDUCTOR, SMD |
| UIS3316HCM-222 | 1 ELEMENT, 2.2 uH, GENERAL PURPOSE INDUCTOR, SMD |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UGB18CCT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:ULTRAFAST EFFICIENT PLASTIC RECTIFIER |
| UGB18CCT/81 | 功能描述:整流器 150 Volt 18 Amp 20ns Dual 175 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| UGB18CCT-E3/81 | 功能描述:整流器 150 Volt 18 Amp 20ns Dual 175 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| UGB18CCTHE3/45 | 功能描述:整流器 18 Amp 150 Volt 20ns Dual 175 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| UGB18CCTHE3/81 | 功能描述:整流器 150 Volt 18 Amp 20ns Dual 175 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。