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參數(shù)資料
| 型號(hào)： | UG8CT-HE3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 128K |
| 代理商： | UG8CT-HE3/45 |
UG(F,B)8AT thru UG(F,B)8DT
Vishay General Semiconductor
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88765
Revision: 09-Nov-07
Note:
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
UG8AT
UG8BT
UG8CT
UG8DT
UNIT
Maximum instantaneous
forward voltage
(1)
8.0 A
20.0 A
5.0 A
T
J
= 150 °C
V
F
1.0
1.2
0.95
V
Maximum DC reverse current at
rated DC blocking voltage
T
J
= 25 °C
T
J
= 100 °C
I
R
10
300
μA
Maximum reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
t
rr
20
ns
Maximum reverse recovery time
I
F
= 8.0 A, V
R
= 30 V,
dI/dt = 50 A/μs,
I
rr
= 10 % I
RM
T
J
= 25 °C
T
J
= 100 °C
t
rr
30
50
ns
Maximum recovered stored
charged
I
F
= 8.0 A, V
R
= 30 V,
dI/dt = 50 A/μs
T
J
= 25 °C
T
J
= 100 °C
Q
rr
20
45
nC
Typical junction capacitance
4.0 V, 1 MHz
C
J
45
pF
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG8AT
UGF8AT
UGB8AT
UNIT
Typical thermal resistance from junction to case
R
θ
JC
4.0
5.0
4.0
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AC
UG8DT-E3/45
1.80
45
50/tube
Tube
ITO-220AC
UGF8DT-E3/45
1.95
45
50/tube
Tube
TO-263AB
UGB8DT-E3/45
1.33
45
50/tube
Tube
TO-263AB
UGB8DT-E3/81
UG8DTHE3/45
(1)
UGF8DTHE3/45
(1)
UGB8DTHE3/45
(1)
UGB8DTHE3/81
(1)
1.33
81
800/reel
Tape reel
TO-220AC
1.80
45
50/tube
Tube
ITO-220AC
1.95
45
50/tube
Tube
TO-263AB
1.33
45
50/tube
Tube
TO-263AB
1.33
81
800/reel
Tape reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UGB18BCT-HE3/45 | 9 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| UH2C-E3/52T | 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA |
| UIS1813HCM-122F | 1 ELEMENT, 1.15 uH, GENERAL PURPOSE INDUCTOR, SMD |
| UIS1813HCM-122 | 1 ELEMENT, 1.15 uH, GENERAL PURPOSE INDUCTOR, SMD |
| UIS1813HCM-331 | 1 ELEMENT, 0.33 uH, GENERAL PURPOSE INDUCTOR, SMD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UG8DT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Ultrafast Rectifier |
| UG8DT | 制造商:Vishay Semiconductors 功能描述:DIODE SOFT RECOVERY 8A |
| UG8DT/45 | 功能描述:整流器 200 Volt 8.0A 20ns 150 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| UG8DT-E3/45 | 功能描述:整流器 200 Volt 8.0A 20ns 150 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| UG8DTHE3/45 | 功能描述:整流器 200 Volt 8.0A 20ns 150 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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