參數(shù)資料
型號(hào): U631H64BSK45
元件分類: SRAM
英文描述: 8K X 8 NON-VOLATILE SRAM, 45 ns, PDSO28
封裝: 0.330 INCH, SOP1-28
文件頁數(shù): 3/13頁
文件大小: 131K
代理商: U631H64BSK45
U631H64
11
March 31, 2006
STK Control #ML0045
Rev 1.0
Due to this automatic RECALL, SRAM operation
cannot commence until tRESTORE after VCC exceeds
VSWITCH.
If the U631H64 is in a WRITE state at the end of power
up RECALL, the SRAM data will be corrupted.
To help avoid this situation, a 10 K
Ω resistor should be
connected between W and VCC.
Hardware Protection
The U631H64 offers hardware protection against inad-
vertent STORE operation through VCC sense.
For VCC < VSWITCH the software initiated STORE opera-
tion will be inhibited.
Low Average Active Power
The U631H64 has been designed to draw significantly
less power when E is LOW (chip enabled) but the
access cycle time is longer than 55 ns.
When E is HIGH the chip consumes only standby cur-
rent.
The overall average current drawn by the part depends
on the following items:
1. CMOS or TTL input levels
2. the time during which the chip is disabled (E HIGH)
3. the cycle time for accesses (E LOW)
4. the ratio of READs to WRITEs
5. the operating temperature
6. the VCC level
The information describes the type of component and shall not be considered as assured characteristics. Terms of
delivery and rights to change design reserved.
相關(guān)PDF資料
PDF描述
U631H64S2C45 8K X 8 NON-VOLATILE SRAM, 45 ns, PDSO28
U84-W-9 GENERAL PURPOSE INDUCTOR
U84-W-6 GENERAL PURPOSE INDUCTOR
U84-W-68 GENERAL PURPOSE INDUCTOR
U84-W-64 GENERAL PURPOSE INDUCTOR
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