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參數(shù)資料
| 型號： | U431 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Matched N-Channel JFET Pairs(最小柵源擊穿電壓-25V，柵極工作電流-15pA的N溝道結(jié)型場效應管) |
| 中文描述： | 匹配N溝道場效應對（最小柵源擊穿電壓- 25V的，柵極工作電流，15pA的N溝道結(jié)型場效應管） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 80K |
| 代理商： | U431 |
U430/431
Siliconix
P-37405—Rev. D, 04-Jul-94
3
Typical Characteristics
100
0
–5
–4
–3
–1
80
20
0
50
40
10
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
V
GS(off)
– Gate-Source Cutoff Voltage (V)
V
DG
– Drain-Gate Voltage (V)
–
I
D
g
f
–
I
G
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
g
fs
I
DSS
60
40
–2
30
20
0
4
3
12
15
9
I
GSS
@ 125 C
T
A
= 125 C
I
G
@ I
D
= 10 mA
10 mA
T
A
= 25 C
200 A
I
GSS
@ 25 C
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
I
D
– Drain Current (mA)
V
GS(off)
– Gate-Source Cutoff Voltage (V)
g
f
T
A
= –55 C
125 C
V
GS(off)
= –3 V
100
–3
–5
–4
–1
80
0
300
240
120
60
0
60
40
20
–2
0
180
r
DS
@ I
D
= 1 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V, f = 1 kHz
r
DS
0.1
1
10
20
16
8
4
0
12
g
os
30
0
–1.2
–1.6
–0.4
–2
24
12
6
0
–0.8
18
Transconductance vs. Gate-Source Voltage
V
GS
– Gate-Source Voltage (V)
T
A
= –55 C
125 C
g
f
50
0
–1.8
–2.4
–0.6
–3
40
20
10
0
–1.2
30
Transconductance vs. Gate-Source Voltage
V
GS
– Gate-Source Voltage (V)
T
A
= –55 C
25 C
125 C
g
f
200 A
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= –3 V
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= –1.5 V
V
DS
= 10 V
f = 1 kHz
25 C
25 C
r
D
–
)
S
g
–
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