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參數(shù)資料
| 型號(hào)： | U401 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V的單片雙N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | 單片雙N溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓至40V的單片雙?溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | U401 |
SST/U401 Series
2
Siliconix
S-52424—Rev. E, 14-Apr-97
Specifications
a
Limits
U401
SST/U404
SST/U406
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A, V
DS
= 0 V
I
G
=
1 A, V
DS
= 0 V
V
GS
= 0 V
–58
–40
–40
–40
V
(BR)G1 – G2
45
30
30
30
V
Gate-Source
Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 1 nA
–1.5
–0.5
–2.5
–0.5
–2.5
–0.5
–2.5
Saturation
Drain Current
c
I
DSS
V
DS
= 10 V, V
GS
= 0 V
3.5
0.5
10
0.5
10
0.5
10
mA
Gate Reverse Current
I
GSS
V
GS
= –30 V, V
DS
= 0 V
–2
–25
–25
–25
pA
T
A
= 125 C
–1
nA
Gate Operating
Current
I
G
V
DG
=
V, I
D
= 200 A
–2
–15
–15
–15
pA
T
A
= 125 C
–0.8
–10
–10
–10
nA
Drain-Source
On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 0.1 mA
250
Gate-Source Voltage
V
GS
V
DG
=
V, I
D
= 200 A
–1
–2.3
–2.3
–2.3
Gate-Source
Forward Voltage
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
Common-Source
Forward
Transconductance
g
fs
V
DS
= 15 V, I
D
= 200 A
f = 1 kHz
1.5
1
2
1
2
1
2
mS
Common-Source
Output Conductance
g
os
1.3
2
2
2
S
Common-Source
Forward
Transconductance
g
fs
V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
4
2
7
2
7
2
7
mS
Common-Source
Output Conductance
g
os
5
30
30
30
S
Common-Source
Input Capacitance
C
iss
= 15 V I
V
DS
= 15 V, I
D
= 200 A
f = 1 MHz
4
8
8
8
Common-Source
Reverse Transfer
Capacitance
C
rss
1.5
3
3
3
pF
Equivalent Input
Noise Voltage
e
n
V
DS
= 15 V, I
D
= 200 A
f = 10 Hz
10
20
20
20
nV
√
Hz
Matching
Differential
Gate-Source Voltage
V
DG
= 10 V, I
D
= 200 A
5
15
40
mV
Gate-Source Voltage
Gate Source Voltage
Differential Change
with Temperature
= 10 V
V
DG
10 V
I
D
= 200 A
A
= –55 to 125 C
SST404
20
T
SST406
40
V/ C
All U
Common Mode
Rejection Ratio
CMRR
V
DG
= 10 to 20 V, I
D
= 200 A
102
dB
Notes
a.
b.
c.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
NNR
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PDF描述 |
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| U406 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V的單片雙N溝道結(jié)型場(chǎng)效應(yīng)管) |
| U421 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V，柵極工作電流-0.25pA的單片雙N溝道結(jié)型場(chǎng)效應(yīng)管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| U401.010A01A | 制造商:IVO 制造商全稱:Baumer IVO GmbH & Co. KG 功能描述:Totalizers mechanic |
| U401.010A01B | 制造商:IVO 制造商全稱:Baumer IVO GmbH & Co. KG 功能描述:Totalizers mechanic |
| U401.020A01A | 制造商:IVO 制造商全稱:Baumer IVO GmbH & Co. KG 功能描述:Totalizers mechanic |
| U401.020A01B | 制造商:IVO 制造商全稱:Baumer IVO GmbH & Co. KG 功能描述:Totalizers mechanic |
| U401_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Low Noise, Low Drift, Monolithic Dual N-Channel JFET |
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