參數(shù)資料
型號(hào)： TZA3023
廠商： NXP Semiconductors N.V.
元件分類： 跨阻放大器
英文描述： SDH/SONET STM4/OC12 transimpedance amplifier
中文描述： SDH / SONET的STM4/OC12阻放大器
文件頁(yè)數(shù)： 5/24頁(yè)
文件大小： 191K
代理商： TZA3023
2000 Mar 29
5
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
PIN diode bias voltage DREF
The transimpedance amplifier together with the PIN diode
determines the performance of an optical receiver for a
large extent. Especially how the PIN diode is connected to
the input and the layout around the input pin influence the
key parameters like sensitivity, bandwidth and the Power
Supply Rejection Ratio (PSRR) of a transimpedance
amplifier. The total capacitance at the input pin is critical to
obtain the highest sensitivity. It should be kept to a
minimum by reducing the capacitor of the PIN diode and
the parasitics around the input pin. The PIN diode should
be placed very close to the IC to reduce the parasitics.
Because the capacitance of the PIN diode depends on the
reverse voltage across it, the reverse voltage should be
chosen as high as possible.
The PIN diode can be connected to the input in two ways
as shown in Figs 5 and 6. In Fig.5 the PIN diode is
connectedbetweenDREFandIPhoto.Pin DREFprovides
an easy bias voltage for the PIN diode. The voltage at
DREF is derived from V
CC
by a low-pass filter. The
low-passfilterconsistingoftheinternalresistorR1,C1and
the external capacitor C2 rejects the supply voltage noise.
The external capacitor C2 should be equal or larger then
1 nF for a high PSRR.
The reverse voltage across the PIN diode is 4.2 V
(5
0.8 V) for 5 V supply or 2.5 V (3.3
0.8 V) for 3.3 V
supply.
The DC voltage at DREF decreases with increasing signal
levels. Consequently the reverse voltage across the
PIN diode will also decrease with increasing signal levels.
This can be explained with an example. When the
PIN diode delivers a peak-to-peak current of 1 mA, the
average DC current will be 0.5 mA. This DC current is
delivered by V
CC
through the internal resistor R1 of 2 k
which will cause a voltage drop of 1 V across the resistor
and the reverse voltage across the PIN diode will be
reduced by 1 V.
It is preferable to connect the cathode of the PIN diode to
a higher voltage then V
CC
when such a voltage source is
available on the board. In this case pin DREF can be left
unconnected.Whenanegativesupplyvoltageisavailable,
the configuration in Fig.6 can be used. It should be noted
that in this case the direction of the signal current is
reversed compared to Fig.5. Proper filtering of the bias
voltage for the PIN diode is essential to achieve the
highest sensitivity level.
MCD900
R1
2 k
C1
10 pF
C2
1 nF
VCC
Ii
4
8
TZA3023
7
IPhoto
DREF
Fig.5
ThePIN diodeconnectedbetweentheinput
and pin DREF.
MCD901
R1
2 k
C1
10 pF
VCC
Ii
4
8
TZA3023
7
IPhoto
negative supply voltage
DREF
Fig.6
ThePIN diodeconnectedbetweentheinput
and a negative supply voltage.
相關(guān)PDF資料
PDF描述
TZA3023T SDH/SONET STM4/OC12 transimpedance amplifier
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相關(guān)代理商/技術(shù)參數(shù)
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TZA3023T 制造商:NXP Semiconductors 功能描述:
TZA3023U 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:SDH/SONET STM4/OC12 transimpedance amplifier
TZA3026 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:SDH/SONET STM4/OC12 transimpedance amplifier
TZA3026U 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:SDH/SONET STM4/OC12 transimpedance amplifier
TZA3030 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:SDH/SONET STM1/OC3 optical receiver
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