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參數(shù)資料
| 型號： | TSTS7303 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case |
| 中文描述： | 砷化鎵紅外發(fā)光二極管在密封至18例 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 81K |
| 代理商： | TSTS7303 |
TSTS730.
Vishay Telefunken
3 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81048
t
p
– Pulse Duration ( ms )
94 8003 e
10
0
10
1
10
1
10
–1
10
–1
10
0
10
2
10
–2
I
F
t
p
/T=0.01
I
FSM
= 2.5 A ( Single Pulse )
0.05
0.1
0.2
0.5
Figure 3. Pulse Forward Current vs. Pulse Duration
0
1
2
3
V
F
– Forward Voltage ( V )
4
94 7996 e
10
1
10
0
10
2
10
3
10
4
10
–1
I
F
Figure 4. Forward Current vs. Forward Voltage
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0.7
0.8
0.9
1.0
1.1
1.2
V
F
100
94 7990 e
I
F
= 10 mA
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
94 8004 e
10
3
10
1
I
F
– Forward Current ( mA )
10
2
10
4
10
0
0.1
1
10
1000
100
I
e
TSTS 7301
TSTS 7302
TSTS 7303
t
p
/T = 0.01 , t
p
= 20 s
Figure 6. Radiant Intensity vs. Forward Current
–
e
I
F
– Forward Current ( mA )
94 7977 e
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Figure 7. Radiant Power vs. Forward Current
–10
10
50
0
100
0
0.4
0.8
1.2
1.6
I
e
T
amb
– Ambient Temperature (
°
C )
140
94 7993 e
I
F
= 20 mA
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSTS750 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case |
| TSTS7500 | 功能描述:紅外發(fā)射源 30 Degree 170mW 950nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSTS7500_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs |
| TSTS7501 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case |
| TSTS7502 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case |
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