參數(shù)資料
型號(hào): TSTS7303
廠商: Vishay Intertechnology,Inc.
英文描述: GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case
中文描述: 砷化鎵紅外發(fā)光二極管在密封至18例
文件頁數(shù): 2/5頁
文件大小: 81K
代理商: TSTS7303
TSTS730.
Vishay Telefunken
2 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81048
Basic Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Breakdown Voltage
Junction Capacitance
Radiant Power
Temp. Coefficient of
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Rise Time
Test Conditions
I
F
= 100 mA, t
p
I
R
= 100 A
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
I
F
= 100 mA
Symbol
V
F
V
(BR)
C
j
Min
Typ
1.3
Max
1.7
Unit
V
V
pF
mW
%/K
deg
nm
nm
ns
20 ms
5
30
7
–0.8
±
12
950
50
400
20 ms
e
TK
e
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1.5 A, t
p
/T = 0.01,
t
p
10 s
I
F
= 1.5 A, t
p
/T = 0.01,
t
p
10 s
p
t
r
Fall Time
t
f
400
ns
Type Dedicated Characteristics
T
amb
= 25 C
Parameter
Radiant Intensity
Test Conditions
I
=100mA, t
p
=20ms
F
Type
Symbol
I
e
I
e
I
e
I
e
Min
4
6.3
10
16
Typ
6.3
10
16
25
Max
Unit
mW/sr
mW/sr
mW/sr
mW/sr
TSTS7300
TSTS7301
TSTS7302
TSTS7303
12.5
20
32
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
25
T
amb
– Ambient Temperature (
°
C )
50
75
100
0
200
400
600
P
V
125
94 8017 e
R
thJA
100
300
500
R
thJC
Figure 1. Power Dissipation vs. Ambient Temperature
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0
50
100
150
200
300
I
F
100
94 8018 e
R
thJC
250
R
thJA
Figure 2. Forward Current vs. Ambient Temperature
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