參數(shù)資料
型號： TSML3710
廠商： Vishay Intertechnology,Inc.
英文描述： GaAs/GaAlAs Infrared Emitting Diode in SMT Package
中文描述： 砷化鎵/ GaAlA紅外發(fā)光二極管封裝在SMT
文件頁數(shù)： 2/8頁
文件大?。?/td> 246K
代理商： TSML3710
www.vishay.com
2
Document Number 81075
Rev. 3, 06-Jun-03
VISHAY
TSML3710
Vishay Semiconductors
Basic Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Typical Characteristics
(T
amb
= 25
°
C unless otherwise specified)
Test condition
Symbol
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TK
φ
e
λ
p
λ
TK
λ
p
t
r
t
r
t
f
t
f
Min
Typ.
1.35
Max
1.7
Unit
V
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
μ
s
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
μ
s
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
2.6
3.2
V
Temp. Coefficient of V
F
Reverse Current
-1.85
mV/K
μ
A
pF
100
Junction Capacitance
25
Radiant Intensity
4
8
mW/sr
60
mW/sr
Radiant Power
Temp. Coefficient of
φ
e
Angle of Half Intensity
Peak Wavelength
35
mW
-0.6
%/K
±60
950
deg
nm
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 20 mA
I
F
= 1 A
I
F
= 20 mA
I
F
= 1 A
Spectral Bandwidth
Temp. Coefficient of
λ
p
Rise Time
50
nm
0.2
nm/K
800
ns
500
ns
Fall Time
800
ns
500
ns
Figure 1. Power Dissipation vs. Ambient Temperature
0
50
100
150
200
250
0
10 20 30 40 50 60 70 80 90 100
T
amb
– Ambient Temperature (
°
C )
16846
P
V
R
thJA
Figure 2. Forward Current vs. Ambient Temperature
0
25
50
75
100
125
0
10 20 30 40 50 60 70 80 90 100
T
amb
– Ambient Temperature (
°
C )
16847
I
-
F
R
thJA
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