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參數(shù)資料
| 型號(hào)： | TSMF3710-GS08 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| 中文描述： | 高速紅外發(fā)光二極管，870納米，雙異質(zhì)的GaAIAs |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 135K |
| 代理商： | TSMF3710-GS08 |
TSMF3710
Vishay Semiconductors
Document Number 81088
Rev. 1.3, 21-Feb-07
www.vishay.com
7
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TSMF3710-GS18 | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| TSML1000 | High-Power SMD IRED GaAlAs/GaAs |
| TSML1020 | Extented Power IR Emitting Diode in SMD Package |
| TSML1040 | Extented Power IR Emitting Diode in SMD Package |
| TSML3710 | GaAs/GaAlAs Infrared Emitting Diode in SMT Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSMF3710-GS18 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| TSML1000 | 功能描述:紅外發(fā)射源 5V 35mW 940nm 12 Deg RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSML1000 | 制造商:Vishay Semiconductors 功能描述:IR Emitting Diode |
| TSML1000_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs |
| TSML1000-GS15 | 制造商:Vishay Semiconductors 功能描述: |
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