參數(shù)資料
型號(hào): TSMF3710-GS08
廠商: Vishay Intertechnology,Inc.
英文描述: High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
中文描述: 高速紅外發(fā)光二極管,870納米,雙異質(zhì)的GaAIAs
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 135K
代理商: TSMF3710-GS08
TSMF3710
Vishay Semiconductors
Document Number 81088
Rev. 1.3, 21-Feb-07
www.vishay.com
3
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Radiant Intensity vs. Forward Pulse Current
0.01
0.1
t
p
- P
u
lse Length (ms)
1
10
1
10
100
1000
10000
100
95 99
8
5
I
F
-
w
a
u
r
DC
t
p
/T = 0.005
0.5
0.2
0.1
0.01
0.05
0.02
T
am
b
< 60 °C
1
88
73
I
F
w
a
u
r
1000
100
10
1
V
F
- For
w
ard
V
oltage (
V
)
0
2
4
t
P
= 100
μ
s
t
P
/T = 0.001
1
3
0.1
1
10
100
1
10
100
1000
1
88
74
I
F
- For
w
ard P
u
lse C
u
rrent (mA)
I
W
/
e
t = 100
μ
s
Figure 6. Relative Radiant Power vs. Wavelength
Figure 7. Relative Radiant Intensity vs. Angular Displacement
8
20
8
70
0
0.25
0.5
0.75
1.0
1.25
920
15
8
21
I
F
= 100 mA
-
v
e
w
e
e
Φ
-
W
a
v
elength (nm)
λ
0.4
0.2
0
0.2
0.4
I
-
v
e
e
0.6
94
8
013
0.6
0.9
0.
8
30°
10°
20°
40°
50°
60°
70°
8
0.7
1.0
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