參數(shù)資料
型號: TSHF5210
廠商: Vishay Intertechnology,Inc.
英文描述: High Speed Infrared Emitting Diode in T-13/4 Package
中文描述: 高速紅外發(fā)光二極管在T - 13 / 4包
文件頁數(shù): 3/6頁
文件大?。?/td> 123K
代理商: TSHF5210
TSHF5210
Vishay Semiconductors
Document Number 81313
Rev. 1.1, 30-Oct-06
www.vishay.com
3
Typical Characteristics
T
amb
= 25 °C unless otherwise specified
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Radiant Intensity vs. Forward Current
100
1000
0.01
0.1
t
P
- P
u
lse D
u
ration (ms)
1.0
10
100
16031
t
P
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
am
b
< 50°
I
F
w
a
u
r
1
88
73
I
F
w
a
u
r
1000
100
10
1
V
F
- For
w
ard
V
oltage (
V
)
0
2
4
t
P
= 100
μ
s
t
P
/T = 0.001
1
3
0.1
1.0
10.0
100.0
1000.0
1
10
100
1000
1
8
220
I
F
- For
w
ard C
u
rrent (mA)
I
e
W
/
Figure 6. Radiant Power vs. Forward Current
Figure 7. Relative Radiant Power vs. Wavelength
Figure 8. Relative Radiant Intensity vs. Angular Displacement
0.1
1.0
10.0
100.0
1000.0
1
1
100
0
1000
16971
I
F
- For
w
ard C
u
rrent (mA)
-
w
e
W
)
e
8
00
900
λ
-
W
a
v
elength (nm)
1000
200
8
2
0
0.25
0.5
0.75
1.0
1.25
-
v
e
w
e
e
Φ
0.4
0.2
0
0.2
0.4
I
e
v
e
0.6
159
8
9
0.6
0.9
0.
8
30°
10°
20°
40°
50°
60°
70°
8
0.7
1.0
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